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Proceedings Paper

Characterization of anodic fluoride films on Hg1-xCdxTe
Author(s): Ignacio Esquivias; M. Dal Colle; D. Brink; Jan W. Baars; Martin Bruder
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Paper Abstract

Experimental results concerning the properties of anodic fluoride films grown on HgCdTe (O.2 xO.3) are presented and discussed. The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te. The films are characterized by some of their optical, electrical and chemical properties. Capacitance—voltage measurements of MIS devices are employed to determine the electronic properties of the anodic fluoridelllgCdTe interface. The results show that a positive and unstable charge density is present at the interface.

Paper Details

Date Published: 1 August 1991
PDF: 12 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46507
Show Author Affiliations
Ignacio Esquivias, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
M. Dal Colle, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
D. Brink, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Jan W. Baars, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Bruder, AEG Aktiengesellschaft (Germany)


Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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