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Proceedings Paper

Anodic oxides on HgZnTe
Author(s): David Eger; Alex Zigelman
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Paper Abstract

The formation of anodic oxides on HgZnTe has been studied and characterized by XPS technique. The physical properties of anodized p-type layers have been investigated by the differential Hall effect, photoconductivity, and photoluminescence measurements. It was found that the tendency to form surface inversion layers on HgZnTe by anodization is considerably lower than that for HgCdTe. There is a considerable increase in effective lifetime values and in photoluminescence intensities. In addition, significant differences between the voltametric analysis curves of HgZnTe and HgCdTe were observed. The results are discussed in view of the bonding characteristics of the two materials.

Paper Details

Date Published: 1 August 1991
PDF: 7 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46506
Show Author Affiliations
David Eger, Soreq Nuclear Research Ctr. (Israel)
Alex Zigelman, Soreq Nuclear Research Ctr. (Israel)


Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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