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Proceedings Paper

Photoconductivity decay method for determining minority carrier lifetime of p-type HgCdTe
Author(s): Joseph Reichman
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Paper Abstract

A theoretical study of the photoconductivity decay method is presented for determining excess carrier lifetime of p-type HgCdTe when recombinations are due to trapping centers. The solutions to the equations describing the transient decay are numerically evaluated and compared with steady-state lifetimes determined using the Shockley-Read equations. It is found for p-type HgCdTe that for short pulse width photoexcitation, the minority carrier lifetime can be obtained from photoconductivity decay measurements.

Paper Details

Date Published: 1 August 1991
PDF: 8 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46504
Show Author Affiliations
Joseph Reichman, Grumman Corporate Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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