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Proceedings Paper

Noncontact lifetime characterization technique for LWIR HgCdTe using transient millimeter-wave reflectance
Author(s): Thomas R. Schimert; John Tyan; Scott L. Barnes; Vern E. Kenner; Austin J. Brouns; H. L. Wilson
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Paper Abstract

A noncontact, noninvasive lifetime characterization technique for measuring the excess carrier lifetime in long wavelength infrared (LWIR) Hg1-xCdxTe (x approximately equals 0.20-0.225) using transient millimeter-wave (90 GHz) reflectance is presented. Excess carrier lifetime results for both p-type (vacancy-doped >= 1 X 1016 cm-3) and n-type (annealed <= 1x1015 cm-3 epilayer material are given. The lifetimes in vacancy-doped p-type HgCdTe are short, i.e., approximately 25 ns at 80 K, thereby requiring a short-pulsed laser source and high-bandwidth electronics in the lifetime test system. The lifetime test system employs either YAG (1.06 micrometers ) or CO2 (9-11 micrometers ) pulsed laser excitation. Lifetime results for both frontside and backside laser illumination of the epilayer HgCdTe are presented. The effect of surface recombination of lifetime and reflected millimeter-wave signal amplitude is discussed.

Paper Details

Date Published: 1 August 1991
PDF: 12 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46503
Show Author Affiliations
Thomas R. Schimert, LTV Missiles and Electronics Group (United States)
John Tyan, LTV Missiles and Electronics Group (United States)
Scott L. Barnes, LTV Missiles and Electronics Group (United States)
Vern E. Kenner, LTV Missiles and Electronics Group (United States)
Austin J. Brouns, LTV Missiles and Electronics Group (United States)
H. L. Wilson, U.S. Army/Ctr. for Night Vision & Electro-Optics (United States)


Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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