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Proceedings Paper

Deep reactive ion etching of silicon using an aluminum etching mask
Author(s): Wei-Chih Wang; Joe Nhut Ho; Per G. Reinhall
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Paper Abstract

A method for fast and efficient deep anisotropic etching of bulk silicon, using a parallel capacitively coupled plasma is presented. The effect of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 angstrom thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350mm deep hole with an area of 3x3mm2 when etching with SF6 /CHF3/O2 plasma. A 2000mm long and 100mm wide (with layers of Al/SiO2/Si and thicknesses of 0.1mm/2.2mm/40mm respectively) cantilever is also achieved. A silicon etch rate up to 2.2 mm/min has be obtained and an anisotropy of A= 0.5 (A=1-V/H, where V=horizontal undercut, H=etch depth) has been observed. The technique was developed mainly for bulk micromachining of silicon or composite silicon cantilever structures.

Paper Details

Date Published: 27 August 2003
PDF: 8 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.464192
Show Author Affiliations
Wei-Chih Wang, Univ. of Washington (United States)
Joe Nhut Ho, Univ. of Washington (United States)
Per G. Reinhall, Univ. of Washington (United States)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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