Share Email Print

Proceedings Paper

Toward a new ultraviolet diode laser: luminescence and p-n junctions in ZnO films
Author(s): Gang Xiong; John Wilkinson; S. Tuzemen; K. B. Ucer; Richard T. Williams
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In order to develop electroluminescent and laser devices based on the ultraviolet exciton emission of ZnO, it will be important to fabricate good p-n junctions. As-grown ZnO is normally of n-type because of oxygen vacancies and zinc interstitials acting as donors. Making p-type ZnO has been more difficult, believed due to self-compensation by intrinsic defects such as the donors Vo and Zni, or possibly by hydrogen as an unintentional extrinsic donor. In this work, we demonstrate that reactively sputtered, vacuum- annealed ZnO films can be changed from n-type to moderate p- type by adjusting the oxygen/argon ratio in the sputtering plasma. We report the properties of p-n homojunctions fabricated in this way and characterize transport in the films by Hall measurements. Ohmic contacts were formed by deposition of Au/Al. Our finding of p-type conductivity in apparently intrinsic ZnO formed by reactive sputtering is not inconsistent with calculated defect formation enthalpies if account is taken of the higher chemical potential of the atomic (ionic) oxygen reservoir represented by the sputter plasma, compared to the molecular oxygen reservoir assumed in the calculation of formation enthalpies. Photoluminescence of the sputtered and annealed films is characterized mainly by the 3.27 eV exciton peak at room temperature.

Paper Details

Date Published: 30 April 2002
PDF: 7 pages
Proc. SPIE 4644, Seventh International Conference on Laser and Laser-Information Technologies, (30 April 2002); doi: 10.1117/12.464143
Show Author Affiliations
Gang Xiong, Wake Forest Univ. (United States)
John Wilkinson, Wake Forest Univ. (United States)
S. Tuzemen, Wake Forest Univ. and Ataturk Univ. (United States)
K. B. Ucer, Wake Forest Univ. (United States)
Richard T. Williams, Wake Forest Univ. (United States)

Published in SPIE Proceedings Vol. 4644:
Seventh International Conference on Laser and Laser-Information Technologies

© SPIE. Terms of Use
Back to Top