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Proceedings Paper

Process latitude measurements on chemically amplified resists exposed to synchrotron radiation
Author(s): Carl P. Babcock; James Welch Taylor; Monroe Sullivan; Doowon Suh; Dean Plumb; Shane R. Palmer; Amanda K. Berry; Karen A. Graziano; Theodore H. Fedynyshyn
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Paper Abstract

Several chemically-amplified resists, positive and negative, have been evaluated for synchrotron x-ray lithography. Some have shown sensitivities as low as 10.1 mJ/cm2. Linewidths of 0.3 micron have been achieved in 1 micron thick single-layer resist with vertical sidewalls and good process latitude, at an x-ray dose of below 50 mJ/cm2. The chemically amplified resists are processed similarly to conventional resists using metal ion free aqueous base developers. Data re presented for resists from Shipley, Rohm and Haas, and Hoechst AG. Lithographic exposures were performed with the University of Wisconsin's Aladdin synchrotron, using the ES-1 beamline of the Center for X-ray Lithography.

Paper Details

Date Published: 1 June 1991
PDF: 10 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46413
Show Author Affiliations
Carl P. Babcock, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Monroe Sullivan, Univ. of Wisconsin/Madison (United States)
Doowon Suh, Univ. of Wisconsin/Madison (United States)
Dean Plumb, Univ. of Wisconsin/Madison (United States)
Shane R. Palmer, Texas Instruments Inc. (United States)
Amanda K. Berry, Rohm and Haas Co., Inc. (United States)
Karen A. Graziano, Rohm and Haas Co., Inc. (United States)
Theodore H. Fedynyshyn, Shipley Co., Inc. (United States)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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