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Proceedings Paper

Far-IR semiconductor laser for future THz-carrier free-space communications
Author(s): Robert E. Peale; Andrei V. Muravjov; Eric W. Nelson; Chris J. Fredricksen; Sergei G. Pavlov; Valery N. Shastin
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Paper Abstract

New experimental results are presented for the far-infrared p-Ge laser that enhance its prospects for application to secure satellite and short-range terrestrial free-space communications on a THz carrier. An optical means of gain modulation has been discovered that may potentially permit far-IR pulse generation via active mode-locking with low drive power. A compact high-field permanent-magnet assembly is demonstrated for applying the magnetic field required for laser operation without need of liquid helium. Compact light-weight laser-excitation electronics have been designed to run off a low voltage direct current supply.

Paper Details

Date Published: 26 April 2002
PDF: 8 pages
Proc. SPIE 4635, Free-Space Laser Communication Technologies XIV, (26 April 2002); doi: 10.1117/12.464109
Show Author Affiliations
Robert E. Peale, Univ. of Central Florida (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Eric W. Nelson, Univ. of Central Florida (United States)
Chris J. Fredricksen, Zaubertek, Inc. (United States)
Sergei G. Pavlov, Institute for Physics of Microstructures (Russia)
Valery N. Shastin, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 4635:
Free-Space Laser Communication Technologies XIV
G. Stephen Mecherle, Editor(s)

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