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Proceedings Paper

Oxygen plasma etching of silylated resist in top-imaging lithographic process
Author(s): Han J. Dijkstra
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Paper Abstract

Oxygen plasma etching of the thin silylated areas in the top-imaging DESIRE process has been studied in a Reactive Ion Etcher (RIE) and in a Distributed Electron Cyclotron Resonance (DECR) etcher. For many RIE process conditions the steady-state model for etching of organosilicon polymers can be used to describe the etch behavior of silylated resist. Deviations from the steady-state model are discussed. It was found that wafer temperature strongly influences the etch rate. After prolonged etching the etch rate of silylated resist increases slowly with time. Rutherford Backscattering Spectroscopy shows that during etching silicon redistribution in the resist occurs. Further, the Si yield per incoming oxygen ion was shown to be pressure dependent. For DECR etching of silylated resist no steady-state behavior was found. The etch rate is not constant, but increases in time. The implications of the etching behavior of silylated resist on pattern formation in the DESIRE process is discussed.

Paper Details

Date Published: 1 June 1991
PDF: 12 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46407
Show Author Affiliations
Han J. Dijkstra, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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