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Proceedings Paper

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy
Author(s): Cormac Moore; Tatiana S. Perova; Barry J. Kennedy; Kevin Berwick; Igor I. Shaganov; R. Alan Moore
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Paper Abstract

In this work, SiO2 and fluorine and phosphorous doped SiO2 thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are therefore discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

Paper Details

Date Published: 27 August 2003
PDF: 10 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.464024
Show Author Affiliations
Cormac Moore, Trinity College (Ireland)
Tatiana S. Perova, Trinity College (Ireland)
Barry J. Kennedy, Intel Ireland Ltd. (Ireland)
Kevin Berwick, Dublin Institute of Technology (Ireland)
Igor I. Shaganov, S.I. Vavilov State Optical Institute (Russia)
R. Alan Moore, Trinity College (Ireland)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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