Share Email Print
cover

Proceedings Paper

Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD
Author(s): Mircea Modreanu; P. K. Hurley; B. J. O'Sullivan; Breda O'Looney; Jean-Pierre Senateur; H. Rousell; F. Rousell; M. Audier; C. Dubourdieu; Ian W. Boyd; Q. Fang; T. L. Leedham; S. A. Rushworth; A. C. Jones; Hywel O. Davies; C. Jimenez
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The optical properties of a set of high-k dielectrics HfO2 thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO2 thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO2 films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320oC) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO2 thin films have a high degree of porosity. After annealing at 800oC in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO2 thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO2 are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.

Paper Details

Date Published: 27 August 2003
PDF: 11 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463984
Show Author Affiliations
Mircea Modreanu, National Microelectronics Research Ctr. (Ireland)
P. K. Hurley, National Microelectronics Research Ctr. (Ireland)
B. J. O'Sullivan, National Microelectronics Research Ctr. (Ireland)
Breda O'Looney, National Microelectronics Research Ctr. (Ireland)
Jean-Pierre Senateur, Institut National Polytechnique de Grenoble (France)
H. Rousell, Institut National Polytechnique de Grenoble (France)
F. Rousell, Institut National Polytechnique de Grenoble (France)
M. Audier, Institut National Polytechnique de Grenoble (France)
C. Dubourdieu, Institut National Polytechnique de Grenoble (France)
Ian W. Boyd, Univ. College London (United Kingdom)
Q. Fang, Univ. College London (United Kingdom)
T. L. Leedham, Inorgtech, Ltd. (United Kingdom)
S. A. Rushworth, Inorgtech, Ltd. (United Kingdom)
A. C. Jones, Inorgtech, Ltd. (United Kingdom)
Hywel O. Davies, Inorgtech, Ltd. (United Kingdom)
C. Jimenez, JIPElec (France)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

© SPIE. Terms of Use
Back to Top