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Proceedings Paper

Mechanism of dissolution inhibition of novolak-diazoquinone resist
Author(s): Mitsuhiro Furuta; Shingo Asaumi; Akira Yokota
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Paper Abstract

Generally accepted mechanism in the development of a positive photoresist is that the diazonaphthoquinone (NDQ) in the unexposed portion undergoes azo-coupling with novolak resin to thereby form a pattern. The azo dyes having free phenolic groups are, however, soluble to an aqueous base solution. Since an azo-coupling product is already present in the developer-dissolved material upon immersion of an unexposed photoresist in a developer, it is unlikely that the azo- coupling product has an effect of inhibiting the dissolution of the azo dyes into the developer. When a photoresist is immersed in a developer, the proportion of NDQ increases as well as the amount of the trihydroxybenzophenone-diazonaphthoquinone-sulfonate (NDQ-ester) and of the higher molecular weight portion of the novolak resin. We accordingly assumed that the dissolution-inhibiting effect was exerted by a mixture of NDQ-triester and the higher molecular weight portion of the novolak resin deposited on the surface of the photoresist during development.

Paper Details

Date Published: 1 June 1991
PDF: 8 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46396
Show Author Affiliations
Mitsuhiro Furuta, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shingo Asaumi, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Akira Yokota, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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