Share Email Print
cover

Proceedings Paper

Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography
Author(s): Seiki Fukunaga; Tomoyuki Kitaori; Hiroo Koyanagi; Shin'ichi Umeda; Kohtaro Nagasawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

this paper describes a novel resist material for i-line or deep uv lithography, consisting of imidazoylsulfonyl-naphthoquinonediazide (IPAC) and co(p-tert.-butylphenol-Bisphenol A)-formaldehyde resin (PBR). Along with the resist material comprising IPAC and PBR, another resist material of which matrix resin is substituted with a chemically modified polyvinylphonol (MPVP) is also presented. PBR and MPVP are considerably transparent at i-line and deep uv regions.

Paper Details

Date Published: 1 June 1991
PDF: 12 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46393
Show Author Affiliations
Seiki Fukunaga, Nippon Kayaku Co., Ltd. (Japan)
Tomoyuki Kitaori, Nippon Kayaku Co., Ltd. (Japan)
Hiroo Koyanagi, Nippon Kayaku Co., Ltd. (Japan)
Shin'ichi Umeda, Nippon Kayaku Co., Ltd. (Japan)
Kohtaro Nagasawa, Nippon Kayaku Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

© SPIE. Terms of Use
Back to Top