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Proceedings Paper

Fusion-bonded mutilayered SOI for MEMS applications
Author(s): David Cole; Cormac McNamara; Kumar Somasundram; Anne Boyle; Claire Devine; James McKeever; Paul McCann; Andrew Nevin
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Paper Abstract

3-stack and 4-stack, 6" dia. multilayered SOI have been fabricated using two different processes, and the bonding ability, thickness uniformity, and stress investigated. High-quality bonding was achieved with good thickness control, independent of the fabrication method used. The stress in the overall structure was controlled by the balance between the combined stress at the oxide silicon interfaces of the SOI buried oxide layers and that exerted by the oxide on the back surface of the handle wafer. An imbalance of 0.5 μm corresponded to a generated bow of about 12 μm. The etch rate of the buried oxide was enhanced along the bonding interface, particularly in the case of an oxide-oxide join, and was found to be strongly dependent on the bond annealing temperature.

Paper Details

Date Published: 27 August 2003
PDF: 10 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463926
Show Author Affiliations
David Cole, Analog Devices Belfast Ltd. (United Kingdom)
Cormac McNamara, Analog Devices Belfast Ltd. (United Kingdom)
Kumar Somasundram, Analog Devices Belfast Ltd. (United Kingdom)
Anne Boyle, Analog Devices Belfast Ltd. (United Kingdom)
Claire Devine, Analog Devices Belfast Ltd. (United Kingdom)
James McKeever, Analog Devices Belfast Ltd. (United Kingdom)
Paul McCann, Analog Devices Belfast Ltd. (United Kingdom)
Andrew Nevin, Analog Devices Belfast Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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