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Proceedings Paper

Nonmetallic acid generators for i-line and g-line chemically amplified resists
Author(s): William R. Brunsvold; Warren Montgomery; Bao Hwang
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Paper Abstract

Here we report two novel nonmetallic acid generators, derived from N- hydroxy-2,3-diphenylmaleimide, which absorb in the Deep UV and Near UV regions and do not require sensitization by additives. We have formulated a base developable positive tone resist containing these acid generators and have demonstrated 0.6 micrometers resolution on g-line and i- line steppers with sensitivity less than 50 mJ/cm2. We will show data characterizing the new materials and describe lithographic results relating to the performance of the resist.

Paper Details

Date Published: 1 June 1991
PDF: 9 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46385
Show Author Affiliations
William R. Brunsvold, IBM/General Technology Div. (United States)
Warren Montgomery, IBM/General Technology Div. (United States)
Bao Hwang, IBM/General Technology Div. (United States)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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