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Proceedings Paper

Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation
Author(s): Sergey N. Nesmelov; Aleksander V. Voitsekhovskii; Aleksander G. Korotaev; Andrej P. Kokhanenko
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Paper Abstract

The development of Schottky barrier technology for creation of IR-photodetectors is caused by reduction of a potential barrier height used by formation of heavily-doped thin layer near to the semiconductor surface. We propose for this aim to form heavily-doped nanolayer in p-Si by recoil implantation of boron. Boron nm-thick film was deposited on the Si sample surfaces by cathode sputtering. After that the samples were irradiated by high intensity Al+ beams extracted from pregenerated explosion-emission plasma. The samples are examined by secondary ion mass-spectrometry (SIMS). It is experimental established that profile of impurity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 1018-1020 cm-3 and thickness of surface layer is 8 - 12 nm. The energy band diagrams of a PtSi - p- Si Schottky barrier with high-doped surface layer formed by recoil implantation were calculated for different parameters of barrier. It is shown, that effective barrier heights in PtSi-Si with recoil implantation formed surface 10 nm layer at surface concentration order 1020 cm-3 is reduced to 0.13 eV, corresponding to a cutoff wavelength of 9.5 micrometers . Thus, the cutoff wavelength of the PtSi Schottky infrared detectors has been extended to the long wavelength infrared region by incorporating a p+ doping layer with exponential profile of impurity distribution at the silicide/silicon interface.

Paper Details

Date Published: 27 March 2002
PDF: 10 pages
Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); doi: 10.1117/12.463849
Show Author Affiliations
Sergey N. Nesmelov, Tomsk State Univ. (Russia)
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Aleksander G. Korotaev, Tomsk State Univ. (Russia)
Andrej P. Kokhanenko, Tomsk State Univ. (Russia)

Published in SPIE Proceedings Vol. 4654:
Silicon-based and Hybrid Optoelectronics IV
David J. Robbins; Ghassan E. Jabbour, Editor(s)

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