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Proceedings Paper

Dislocation-engineered silicon light-emitting diodes
Author(s): Manon A. Lourenco; Wei Lek Ng; Gousheng Shao; Russell M. Gwilliam; Kevin P. Homewood
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Paper Abstract

Efficient silicon-based light emitting diodes have been fabricated using a recently developed approach - dislocation engineering. Crucially this technique uses entirely conventional ULSI processes. The devices were fabricated by conventional low energy boron implantation into silicon substrates followed by high temperature rapid thermal annealing. Strong silicon band edge luminescence was observed. Electroluminescence emissions with an efficiency greater than 2 X 10-4 at rom temperature were measured; the device lifetime was found to be approximately 18 microsecond(s) . The luminescence integrated intensity varied with the device fabrication conditions. In this paper we discuss the influence of processing conditions on the luminescence emissions.

Paper Details

Date Published: 27 March 2002
PDF: 7 pages
Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); doi: 10.1117/12.463848
Show Author Affiliations
Manon A. Lourenco, Univ. of Surrey (United Kingdom)
Wei Lek Ng, Univ. of Surrey (United Kingdom)
Gousheng Shao, Univ. of Surrey (United Kingdom)
Russell M. Gwilliam, Univ. of Surrey (United Kingdom)
Kevin P. Homewood, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 4654:
Silicon-based and Hybrid Optoelectronics IV
David J. Robbins; Ghassan E. Jabbour, Editor(s)

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