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Proceedings Paper

Study of the chemically amplifiable resist materials for electron-beam lithography
Author(s): Hiroo Koyanagi; Shin'ichi Umeda; Seiki Fukunaga; Tomoyuki Kitaori; Kohtaro Nagasawa
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Paper Abstract

As generally accepted, the chemically amplified resist system is one of the most promising candidates for a finer lithography. Our experimental results indicate that some of chemically amplified resist systems have drawbacks to be improved, however, especially in the sensitivity dependency on linewidth and in shelf life. This paper describes an improved resist system for electron beam lithography comprising polyvinylphenol, alkoxymethylbenzoguanamine, and triharomethylarylsulfone. Under optimization both in the resist formulation and processing, it has been shown that the resist system had a consistent sensitivity of 1.2 (mu) C/cm2 for a 0.15 micrometers and 2 micrometers line-and-space pattern, for instance, and that a shelving of the resist system for over three months at ambient temperature (25 C) gave rise to hardly any sign of change in its performance.

Paper Details

Date Published: 1 June 1991
PDF: 16 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46383
Show Author Affiliations
Hiroo Koyanagi, Nippon Kayaku Co., Ltd. (Japan)
Shin'ichi Umeda, Nippon Kayaku Co., Ltd. (Japan)
Seiki Fukunaga, Nippon Kayaku Co., Ltd. (Japan)
Tomoyuki Kitaori, Nippon Kayaku Co., Ltd. (Japan)
Kohtaro Nagasawa, Nippon Kayaku Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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