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Proceedings Paper

Effect of sensitizer spatial distribution on dissolution inhibition in novolak/diazonaphthoquinone resists
Author(s): Veena Rao; Laura L. Kosbar; Curtis W. Frank; Roger Fabian W. Pease
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Paper Abstract

The inhibition mechanism is novolak/diazonaphthoquinone resists is widely studied. We are interested in evaluating the effect of sensitizer distribution in the resist on the dissolution properties. Langmuir- Blodgett film deposition allows us to control the spatial distribution of sensitizer and thus evaluate its 'sphere of influence' on the dissolution inhibition of the novolak resin. We have performed both dissolution studies and lithographic studies on films with sensitizer deposition only on the surface as well as films with an embedded layer of sensitizer between two layers of novolak polymer. The surface layer films with one monolayer of sensitizer do not demonstrate any inhibitive properties unless the films are thermally treated. However, for the analogous embedded layer films, inhibition does occur without any baking of the samples. Also, in the lithographic studies, pattern contrast is improved considerably upon baking the samples; indicating that intimate interactions between resist components which may be induced by the thermal treatment is necessary for dissolution inhibition to take place.

Paper Details

Date Published: 1 June 1991
PDF: 15 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46380
Show Author Affiliations
Veena Rao, Stanford Univ. (United States)
Laura L. Kosbar, Stanford Univ. (United States)
Curtis W. Frank, Stanford Univ. (United States)
Roger Fabian W. Pease, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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