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Proceedings Paper

Pulsed laser deposition of wide-bandgap semiconductor thin films
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Paper Abstract

Thin films of ZnO and GaN have been deposited by pulsed laser deposition in atmospheres of oxygen and nitrgoen respectively. A time-of-flight ion probe and optical spectroscopy were used to study the interaction of the ablation plasma with the background gas. The deposition rate was measured using in situ optical reflectivity, and the thin film quality was assessed using x-ray diffraction and photoluminescence. By correlating the plasma measurements and the thin film characterization it was possible to identify the plasma regime required for the deposition of good quality films.

Paper Details

Date Published: 27 August 2003
PDF: 9 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463774
Show Author Affiliations
Donagh O'Mahony, Trinity College Dublin (Ireland)
Eduardo de Posada, Trinity College Dublin (Ireland)
James G. Lunney, Trinity College Dublin (Ireland)
Jean-Paul Mosnier, Dublin City Univ. (Ireland)
Enda McGlynn, Dublin City Univ. (Ireland)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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