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Proceedings Paper

Study of femtosecond laser interaction with wafer-grade silicon
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Paper Abstract

In this paper the interaction of ultra-short pulses (150fs) of laser radiation (wavelength 775nm) over a range of fluences with wafer grade Silicon material in air was analysed using optical and electron microscopy. Optical microscopy was performed by the use of a white light interferometer and a high power optical microscope (magnification 100X). The resolution of both these methods was only sufficient to resolve large dimensions relative to the wavelength of light. For smaller geometries and greater detail, electron microscopy (resolution 1.5nm, 1KV) was used to obtain more information due to its greater resolution and depth of focus. When used in conjunction with surface, cross sectional and transmission imaging, this technique provided the greatest level of detail on the physical processes involved. Using these analysis techniques it was possible to provide a qualitative understanding of the ablation process as a function of laser fluence and to quantitatively describe the depth per pulse over a range of laser fluences, from which a value for the ablation threshold for Silicon (0.17Jcm-2) could be derived.

Paper Details

Date Published: 27 August 2003
PDF: 13 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463752
Show Author Affiliations
Edward Coyne, National Ctr. for Laser Applications (Ireland)
Jonathan Magee, National Ctr. for Laser Applications (Ireland)
Paul Mannion, National Ctr. for Laser Applications (Ireland)
Gerard M. O'Connor, National Ctr. for Laser Applications (Ireland)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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