Share Email Print

Proceedings Paper

Application aspects of the Si-CARL bilayer process
Author(s): Michael Sebald; Joerg Berthold; Michael Beyer; Rainer Leuschner; Christoph Noelscher; Ulrich Scheler; Recai Sezi; Hellmut Ahne; Siegfried Birkle
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The basic chemistry and lithographic characteristics of anhydride- containing, diazo-based NUV and DUV resists as well as silylation of top resist patterns with aqueous solutions of silicon-containing diamines in the Si-CARL bilayer process (CARL: Chemical Amplification of Resist Lines) were reported recently. This paper describes technical control of the Si-CARL process for g-line and DUV in a 6 inch pilot line using automatic equipment. Linewidth uniformity of top resist patterns is not affected by silylation and is found to be 0.045 micrometers (3(sigma) ) for nominal 0.4 micrometers lines/spaces, the resolution limit of the 0.55 NA g- line stepper used. Both overexposure and linewidth increase due to silylation conditions can be used in the Si-CARL process for optimization of defocus latitudes. With the use of a 0.55 NA g-line stepper total defocus latitudes are 2.8 micrometers for 0.6 micrometers equal lines and spaces and > 3.2 micrometers for isolated 0.6 micrometers spaces. In order to meet the requirement for sufficient throughput on KrF-excimerlaser steppers the sensitivity of DUV top resists is improved by chemical variations of resist polymers. The use of maleimide-containing resist polymers with improved alkaline solubility in diazo-inhibited top resists allows resolution of 0.25 micrometers lines and spaces at 161 mJ/cm2 on a 0.37 NA KrF-excimerlaser stepper. Further considerable improvement of DUV sensitivity to 11 mJ/cm2 was achieved using an acid-catalyzed top resist based on onium-salt and a terpolymer containing N-t-BOC-maleimide-units.

Paper Details

Date Published: 1 June 1991
PDF: 11 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46374
Show Author Affiliations
Michael Sebald, Siemens AG (Germany)
Joerg Berthold, Siemens AG (Germany)
Michael Beyer, Siemens AG (Germany)
Rainer Leuschner, Siemens AG (Germany)
Christoph Noelscher, Siemens AG (Germany)
Ulrich Scheler, Siemens AG (Germany)
Recai Sezi, Siemens AG (Germany)
Hellmut Ahne, Siemens AG (Germany)
Siegfried Birkle, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

© SPIE. Terms of Use
Back to Top