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Proceedings Paper

Bilayer resist system utilizing alkali-developable organosilicon positive photoresist
Author(s): Kazuo Nate; Akiko Mizushima; Hisashi Sugiyama
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Paper Abstract

A bi-layer resist system utilizing an alkali-developable organosilicon positive photoresist (OSPR) has been developed. The composite prepared from an alkali-soluble organosilicon polymer, poly(p- hydroxybenzylsilsesquioxane) and naphthoquinone diazide becomes a alkali-developable positive photoresist which is sensitive to UV (i line - g line) region, and exhibited high oxygen reactive ion etching (O2 RIE) resistance. The sensitivity and the resolution of OSPR are almost the same as those of conventional novolac-based positive photoresists. The bi-layer resist system utilizing OSPR as the top imaging layer gave fine patterns of underlayers with high aspect ratio easily.

Paper Details

Date Published: 1 June 1991
PDF: 5 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46371
Show Author Affiliations
Kazuo Nate, Hitachi, Ltd. (Japan)
Akiko Mizushima, Hitachi, Ltd. (Japan)
Hisashi Sugiyama, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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