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Proceedings Paper

Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication
Author(s): Will Conley; Robert Dundatscheck; Jeffrey D. Gelorme; John Horvat; Ronald M. Martino; Elizabeth Murphy; Anne Petrosky; Gary T. Spinillo; Kevin J. Stewart; Robert Wilbarg; Robert L. Wood
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Paper Abstract

In this paper we discuss a new alkaline soluble negative acting photoresist which incorporates a phenolic based resin, urea/formaldehyde prepolymer as a crosslinking agent and an organic acid-generating sensitizer. This system, dubbed 'EBX' (Electron Beam/X-ray) resist has demonstrated excellent lithographic properties in various exposure modes. Discussion will center on imaging characteristics in the deep and mid ultraviolet using Micrascan I and I-line (365 nm) steppers; electron-beam imaging with MEBES 10 kV mask maker and IBM's EL-4 50 kV electron beam exposure system; and XRAY imaging with point source soft x-ray and synchotron hard x-ray lithography.

Paper Details

Date Published: 1 June 1991
PDF: 14 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46358
Show Author Affiliations
Will Conley, IBM/East Fishkill Facility (United States)
Robert Dundatscheck, IBM/East Fishkill Facility (United States)
Jeffrey D. Gelorme, IBM/East Fishkill Facility (United States)
John Horvat, IBM/East Fishkill Facility (United States)
Ronald M. Martino, IBM/East Fishkill Facility (United States)
Elizabeth Murphy, IBM/East Fishkill Facility (United States)
Anne Petrosky, IBM/East Fishkill Facility (United States)
Gary T. Spinillo, IBM/East Fishkill Facility (United States)
Kevin J. Stewart, IBM/East Fishkill Facility (United States)
Robert Wilbarg, IBM/East Fishkill Facility (United States)
Robert L. Wood, IBM/East Fishkill Facility (United States)


Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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