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Proceedings Paper

Design and mixed modeling of PhCCD with vertical antiblooming structure
Author(s): Evgeni V. Kostyukov; Andre A. Pugachev; Alexander S. Skrylev; Pavel A. Skrylev
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Paper Abstract

Mixed modeling of photosensitive CCD-features is given. The modeling includes simulation of the following design stages: 2D-fabrication process, 2D-potential and electric field distributions and wells providing desired characteristics of the CCD pixel, charge capacity, photosensitivity, noises, modulation transfer function, and output signal using specialized CAD. A new four-phase PhCCD-chip with size of photosensitive area equal to 582(H) X 500 (V) pixels, pixel size 17 (V) X 11 (H) micrometers , photodiode accumulator, and vertical antiblooming structure has been simulated and designed.

Paper Details

Date Published: 30 April 2002
PDF: 9 pages
Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); doi: 10.1117/12.463470
Show Author Affiliations
Evgeni V. Kostyukov, Pulsar Science Research Institute (Russia)
Andre A. Pugachev, Pulsar Science Research Institute (Russia)
Alexander S. Skrylev, Pulsar Science Research Institute (Russia)
Pavel A. Skrylev, Institute of Design Problems in Microelectronics (Russia)


Published in SPIE Proceedings Vol. 4761:
Second Conference on Photonics for Transportation

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