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Proceedings Paper

Total dose effects in the auger transistor
Author(s): Dmitry V. Gromov; Vadim V. Elesin; Aledxander Y. Nikiforov; Stanislav A. Polevich; Yury F. Adamov; V. G. Mokerov
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Paper Abstract

The total dose effects in the Auger Tunnel Emitter Transistor (Auger TETRAN) have been experimentally investigated. It was established, that DC characteristic i.e. the collector current and the current gain coefficient are sufficiently degraded under (gamma) -rays irradiation over 5.106 rad(Si). An unusual non-monotonous behavior of the DC characteristic was also observed at a low collector voltage.

Paper Details

Date Published: 30 April 2002
PDF: 4 pages
Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); doi: 10.1117/12.463466
Show Author Affiliations
Dmitry V. Gromov, Moscow State Engineering and Physics Institute (Russia)
Vadim V. Elesin, Moscow State Engineering and Physics Institute (Russia)
Aledxander Y. Nikiforov, Moscow State Engineering and Physics Institute (Russia)
Stanislav A. Polevich, Moscow State Engineering and Physics Institute (Russia)
Yury F. Adamov, Moscow State Engineering and Physics Institute (Russia)
V. G. Mokerov, Moscow State Engineering and Physics Institute (Russia)


Published in SPIE Proceedings Vol. 4761:
Second Conference on Photonics for Transportation

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