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Proceedings Paper

Active-area shape influence on the dark current of CMOS imagers
Author(s): Igor Shcherback; Alexander A. Belenky; Orly Yadid-Pecht
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Paper Abstract

This work presents an empirical dark current model for CMOS Active Pixel Sensors (APS). The model is based on experimental data taken of a 256 X 256 APS chip fabricated via HP in a standard 0.5 micrometers CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the 'ideal' dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process induced structure stress effect.

Paper Details

Date Published: 24 April 2002
PDF: 8 pages
Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463445
Show Author Affiliations
Igor Shcherback, Ben-Gurion Univ. of the Negev (Israel)
Alexander A. Belenky, Ben-Gurion Univ. of the Negev (Israel)
Orly Yadid-Pecht, Ben-Gurion Univ. of the Negev (Israel)


Published in SPIE Proceedings Vol. 4669:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III
Nitin Sampat; Morley M. Blouke; John Canosa; John Canosa; Nitin Sampat, Editor(s)

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