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Proceedings Paper

Proton radiation damage in high-resistivity n-type silicon CCDs
Author(s): Christopher Bebek; Donald E. Groom; Steven E. Holland; Armin Karcher; William F. Kolbe; Julie S. Lee; Michael E. Levi; Nicholas P. Palaio; Bojan T. Turko; Michela C. Uslenghi; M. T. Wagner; Guobin Wang
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Paper Abstract

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1 X 1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

Paper Details

Date Published: 24 April 2002
PDF: 11 pages
Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463422
Show Author Affiliations
Christopher Bebek, Lawrence Berkeley National Lab. (United States)
Donald E. Groom, Lawrence Berkeley National Lab. (United States)
Steven E. Holland, Lawrence Berkeley National Lab. (United States)
Armin Karcher, Lawrence Berkeley National Lab. (United States)
William F. Kolbe, Lawrence Berkeley National Lab. (United States)
Julie S. Lee, Lawrence Berkeley National Lab. (United States)
Michael E. Levi, Lawrence Berkeley National Lab. (United States)
Nicholas P. Palaio, Lawrence Berkeley National Lab. (United States)
Bojan T. Turko, Lawrence Berkeley National Lab. (United States)
Michela C. Uslenghi, Lawrence Berkeley National Lab. (Italy)
M. T. Wagner, Lawrence Berkeley National Lab. (United States)
Guobin Wang, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 4669:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III
Nitin Sampat; John Canosa; Morley M. Blouke; John Canosa; Nitin Sampat, Editor(s)

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