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Proceedings Paper

Transversal direct readout CMOS APS with variable shutter mode
Author(s): Shigehiro Miyatake; Masaru Miyamoto; Takashi Morimoto; Yasuo Masaki; Hideki Tanabe
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Paper Abstract

A transversal direct readout (TDR) structure for CMOS active pixel image sensors (APSs) eliminates the vertically striped fixed pattern noise. This novel architecture has evolved to incorporate a variable shutter mode as well as simplifying the pixel structure. This paper describes a 320 X 240- pixel TDR APS that not only exhibits neither vertically nor horizontally striped fixed pattern noise, but can also take pictures at selected exposure times. The pixel consists of a photodiode, a row- and a column-reset transistor, a source- follower input transistor, and a column-select transistor instead of the row-select transistor found in conventional CMOS APSs. The column-select transistor is connected to a signal line, which runs horizontally instead of vertically. The column-reset and the column-select transistor are driven by the same pulse different from its predecessor. Thus the pixel is simplified by the reduction of the number of bus lines similar to conventional CMOS APSs.

Paper Details

Date Published: 24 April 2002
PDF: 8 pages
Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); doi: 10.1117/12.463421
Show Author Affiliations
Shigehiro Miyatake, Minolta Co., Ltd. (Japan)
Masaru Miyamoto, Minolta Co., Ltd. (Japan)
Takashi Morimoto, Minolta Co., Ltd. (Japan)
Yasuo Masaki, Gazoh System Kaihatsu, Inc. (Japan)
Hideki Tanabe, Gazoh System Kaihatsu, Inc. (Japan)

Published in SPIE Proceedings Vol. 4669:
Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III
Nitin Sampat; Morley M. Blouke; John Canosa; John Canosa; Nitin Sampat, Editor(s)

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