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Proceedings Paper

Design of a CMOS BDJ detector array for fluorescence imaging application
Author(s): Gerard Sou; Guo Neng Lu
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Paper Abstract

The Buried Double Junction (BDJ) detector [1], which can be used either as a wavelength-sensitive device and as a photodetector, can be implemented in standard CMOS IC technologies, with no requirement for additional post process step. It has recently been applied to fluorescence detection [2]. The wavelength-sensitive operation of the CMOS BDJ detector is based on the wavelength dependence of the Silicon absorption coefficient a(X) in the visible range. An absorption length defined as 1(X) varies monotonically, from about 0. 1pm to several micrometers when the wavelength of an incident monochromatic light changes from 0.4 jim to 0.8 jim.

Paper Details

Date Published: 19 April 2002
PDF: 6 pages
Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462825
Show Author Affiliations
Gerard Sou, Univ. Pierre et Marie Curie (France)
Guo Neng Lu, Univ. Claude Bernard Lyon I (France)

Published in SPIE Proceedings Vol. 4755:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002
Bernard Courtois; Jean Michel Karam; Karen W. Markus; Bernd Michel; Tamal Mukherjee; James A. Walker, Editor(s)

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