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Proceedings Paper

Design and characterization of levitated suspended rf inductors
Author(s): Bohuslav Palan; Kholdoun Torki; Bernard Courtois; Miroslav Husak
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Paper Abstract

This paper presents design of novel on-chip mi9cromachined spiral inductors developed in 0.8micrometers commercial CMOS technology. Proposed innovative architecture maximizes the quality factor Q. Suspended inductors can be placed vertically above the substrate, thus, the parasitic substrate effects are considerably reduced. Four designed passive inductors have values from 1nH to 7nH. The Q-factor greater than ten is estimated from calculations, and is experimentally verified by S-parameter measurements.

Paper Details

Date Published: 19 April 2002
PDF: 8 pages
Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462799
Show Author Affiliations
Bohuslav Palan, TIMA Lab. (France)
Kholdoun Torki, TIMA Lab. (France)
Bernard Courtois, TIMA Lab. (France)
Miroslav Husak, Czech Technical Univ./Prague (Czech Republic)

Published in SPIE Proceedings Vol. 4755:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002
Bernard Courtois; Jean Michel Karam; Karen W. Markus; Bernd Michel; Tamal Mukherjee; James A. Walker, Editor(s)

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