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Proceedings Paper

High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm
Author(s): Marc T. Kelemen; Franz Rinner; Joseph Rogg; Nicolas Wiedmann; Rudolf Kiefer; Martin Walther; Michael Mikulla; Guenter Weimann
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Paper Abstract

Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low- cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. Low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 940 nm were grown by molecular beam epitaxy. The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length between 2 mm and 3 mm. Whereas the length of the tapered structure determines the high output power, the high brightness requires a ridge-waveguide structure with sufficient length. Here the length of the ridge section has been chosen to 500 micrometers . We achieved an optical output power of up to 5.3 W at room temperature in continuous wave mode. The threshold current density depends on the tapered length with values between 200 A/cm2 and 650 A/cm2. The slope efficiency is around 0.9 W/A for all devices. The wall plug efficiency reaches 44% at a current of 3 A. The beam quality factor remains nearly constant up to about 2.2 W having an M2-value of 1.3. At higher optical powers M2 increases fast. The lifetime of such devices has been extrapolated to more than 7500 h at room temperature.

Paper Details

Date Published: 16 April 2002
PDF: 7 pages
Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); doi: 10.1117/12.462644
Show Author Affiliations
Marc T. Kelemen, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Franz Rinner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Joseph Rogg, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Nicolas Wiedmann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Rudolf Kiefer, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Michael Mikulla, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Guenter Weimann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 4648:
Test and Measurement Applications of Optoelectronic Devices
Niloy K. Dutta; Aland K. Chin; Robert W. Herrick; Niloy K. Dutta; Robert W. Herrick; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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