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Proceedings Paper

Simple thermal response model for a p-doped silicon substrate irradiated by 1.06- and 1.32-um lasers
Author(s): Paul J. Chernek; Jay A. Orson
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Paper Abstract

A variation to an existing laser damage model has been developed. The principle modification in this paper is the inclusion of the temperature dependent absorption coefficient. The absorption coefficient was specifically calculated for silicon irradiated by lasers at 1.06 and 1.32 microns. At these wavelengths, the incident laser photons are at and below the indirect absorption band gap of silicon. Four temperature dependent absorption processes of silicon are considered. These include one photon free carrier absorption, one photon/one phonon indirect absorption, one photon/three phonon indirect absorption and two photon/one phonon indirect absorption. From these four processes, simple absorption coefficients are derived for both 1.06 and 1.32 micrometers radiation. The resulting predictions of laser damage for 1.06 and 1.32 micrometers laser radiation on silicon substrates are provided.

Paper Details

Date Published: 9 April 2002
PDF: 12 pages
Proc. SPIE 4679, Laser-Induced Damage in Optical Materials: 2001, (9 April 2002); doi: 10.1117/12.461698
Show Author Affiliations
Paul J. Chernek, Ball Aerospace and Technologies Corp. (United States)
Jay A. Orson, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 4679:
Laser-Induced Damage in Optical Materials: 2001
Gregory J. Exarhos; Arthur H. Guenther; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz, Editor(s)

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