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Proceedings Paper

1.54-um spontaneous and stimulated emission of Er-2O centers in GaAs: experiments and modeling
Author(s): Petr Georgievich Eliseev; S. V. Gastev; A. Koizumi; Y. Fujiwara; Y. Takeda
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Paper Abstract

Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples are prepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er-2O luminescent centers. The low-temperature spectral bandwidth of the predominant emission line at 1538.1 nm is measured to be approximately 0.04 nm. The decay time of approximately 1.1 ms is measured for the Er-related emission at 77 K. Stimulated emission is identified at 77 K from gain measurements by variable-stripe-length method. The measured gain up to 45 cm- at pumping power density of 0.1 kW/cm2. The model is presented that explains sublinear power dependence of the Er-related spontaneous luminescence.

Paper Details

Date Published: 5 April 2002
PDF: 8 pages
Proc. SPIE 4645, Rare-Earth-Doped Materials and Devices VI, (5 April 2002); doi: 10.1117/12.461666
Show Author Affiliations
Petr Georgievich Eliseev, Nagoya Univ. (United States)
S. V. Gastev, Nagoya Univ. (Russia)
A. Koizumi, Nagoya Univ. (Japan)
Y. Fujiwara, Nagoya Univ. (Japan)
Y. Takeda, Nagoya Univ. (Japan)

Published in SPIE Proceedings Vol. 4645:
Rare-Earth-Doped Materials and Devices VI
Shibin Jiang; Robert W. Keys, Editor(s)

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