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Proceedings Paper

Bi2O3-based glass for S-band amplification
Author(s): Seiki Ohara; Naoki Sugimoto; Yuki Kondo; Katsuhiro Ochiai; Yutaka Kuroiwa; Yasuji Fukasawa; Takeshi Hirose; Hideaki Hayashi; Setsuhisa Tanabe
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Paper Abstract

Bi2O3-based thulium (Tm3+) doped glass fiber (Bi-TDF) for S-band amplification was investigated. Tm3+ was doped in Bi2O3-SiO2 based glass and melted using a conventional method. Emission spectra of the 3H4 - 3F4 were measured with pumping at a wavelength of 792 nm using laser diode (LD). Full width of half maximum (FWHM) of the emission is 1.4 times and 1.1 times broader than that of fluoride glass and tellurite glass, respectively. Moreover, the emission peak shifted towards longer wavelength as compared with fluoride and tellurite glasses. Single mode Bi-TDFs with Tm3+ concentrations of 2000 ppm, 3900 ppm and 6000 ppm were fabricated and evaluated with fusion splicing to SiO2 fibers. Gain profiles were measured with bi-directional pumping using 1047 nm Yb fiber lasers. The gain-peaks observed around 1470 nm shifted towards longer wavelength with increasing Tm3+ concentration. Gain properties of Bi-TDF were improved by additional pumping at the wavelength of 1560 nm with Tm3+ concentrations of 2000 ppm and 3900 ppm. A maximum gain over 10 dB of Bi-TDF was obtained using a fusion spliceable Bi-TDF with a length of only 100 cm.

Paper Details

Date Published: 5 April 2002
PDF: 8 pages
Proc. SPIE 4645, Rare-Earth-Doped Materials and Devices VI, (5 April 2002); doi: 10.1117/12.461656
Show Author Affiliations
Seiki Ohara, Asahi Glass Co., Ltd. (Japan)
Naoki Sugimoto, Asahi Glass Co., Ltd. (Japan)
Yuki Kondo, Asahi Glass Co., Ltd. (Japan)
Katsuhiro Ochiai, Asahi Glass Co., Ltd. (Japan)
Yutaka Kuroiwa, Asahi Glass Co., Ltd. (Japan)
Yasuji Fukasawa, Asahi Glass Co., Ltd. (Japan)
Takeshi Hirose, Asahi Glass Co., Ltd. (Japan)
Hideaki Hayashi, Kyoto Univ. (Japan)
Setsuhisa Tanabe, Asahi Glass Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4645:
Rare-Earth-Doped Materials and Devices VI
Shibin Jiang; Robert W. Keys, Editor(s)

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