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Proceedings Paper

Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics
Author(s): Nikolai N. Ledentsov; D. Litvinov; D. Gerthsen; G. A. Ljubas; V. V. Bolotov; B. R. Semyagin; Vitaly A. Shchukin; Ilja P. Soshnikov; Victor M. Ustinov; Dieter Bimberg
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Paper Abstract

GaAs and InGaAs (311) surfaces may be spontaneously corrugated with a height and a period controlled by the film composition, strain and polarity of the substrate. Using image-processed high-resolution transmission electron microscopy we found that both GaAs - AlAs interfaces in short-period superlattices (SPSL) grown on (311)A GaAs substrates are corrugated with a height of 1 nm and a lateral periodicity of 3.2 nm. The same lateral periodicity is also revealed for SPSL grown on (311)B surfaces, but the corrugation height and the degree of order are strongly reduced in this case. A strong optical anisotropy (up to 60%) is found in photoluminescence (PL) spectra for SPSLs grown on (311)A surface and not for (311)B-grown SPSLs. We observed a strong mixing between (Gamma) and X states in the conduction band for the SPSLs grown on (311)A surface which allowed realization of bright PL at room temperature at 650 nm. (311)B and (100)GaAs-AlAs SPSLs grown side by side demonstrated only weak long-wavelength PL due to disorder- induced states. (311)A SPSLs demonstrate also a slow carrier relaxation with characteristic LO-phonon scattering times in excess of 10 ps. Corrugated SLs are particularly advantageous for polarization stabilized surface emitting lasers, bright-red AlGaAs lasers and far infrared emitters and detectors.

Paper Details

Date Published: 28 March 2002
PDF: 10 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460811
Show Author Affiliations
Nikolai N. Ledentsov, Technische Univ. Berlin and A.F. Ioffe Physico-Technical Institute (Germany)
D. Litvinov, Univ. Karlsruhe (Germany)
D. Gerthsen, Univ. Karlsruhe (Germany)
G. A. Ljubas, Institute of Semiconductor Physics (Russia)
V. V. Bolotov, Institute of Semiconductor Physics (Russia)
B. R. Semyagin, Institute of Semiconductor Physics (Russia)
Vitaly A. Shchukin, Technische Univ. Berlin and A.F. Ioffe Physical-Technical Institute (Germany)
Ilja P. Soshnikov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Dieter Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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