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Proceedings Paper

Quantum dot infrared photodetectors
Author(s): Zhengmao Ye; Joseph P. Campbell; Zhonghui Chen; E. T. Kim; Anupam Madhukar
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Paper Abstract

InAs quantum dot infrared photodetectors based on bound-to- bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers . At 77 K and -0.7 V bias the responsivity was 14 mA/W and the detectivity, D*, was 1010 cmHz1/2/W. By introducing InGaAs cap layers, a QDIP with bias-controllable two-color characteristic was demonstrated.

Paper Details

Date Published: 28 March 2002
PDF: 9 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460809
Show Author Affiliations
Zhengmao Ye, Univ. of Texas at Austin (United States)
Joseph P. Campbell, Univ. of Texas at Austin (United States)
Zhonghui Chen, Univ. of Southern California (United States)
E. T. Kim, Univ. of Southern California (United States)
Anupam Madhukar, Univ. of Southern California (United States)

Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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