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Proceedings Paper

Single ion implantation for solid state quantum computer development
Author(s): Thomas Schenkel; J. Meijer; Arun Persaud; Joe W. McDonald; J. P. Holder; Dieter H. Schneider
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Paper Abstract

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31Pq+ ions. When 31Pq+ ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

Paper Details

Date Published: 28 March 2002
PDF: 6 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460808
Show Author Affiliations
Thomas Schenkel, Lawrence Berkeley National Lab. (United States)
J. Meijer, Lawrence Berkeley National Lab. (United States)
Arun Persaud, Lawrence Berkeley National Lab. (United States)
Joe W. McDonald, Lawrence Livermore National Lab. (United States)
J. P. Holder, Lawrence Livermore National Lab. (United States)
Dieter H. Schneider, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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