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Proceedings Paper

Growth and characterization of single and stacked InP/InAs/InP quantum wires
Author(s): Xiaodong Mu; Yujie J. Ding; Ioulia B. Zotova; Haeyeon Yang; Gregory J. Salamo
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Paper Abstract

Self-assembled InP/InAs/InP quantum wires have been successfully stacked for 10 vertical periods and characterized based on photoluminescence (PL) studies. Compared with single-period quantum wires, unique behaviors appear in the PL spectra and some fundamental effects have been observed. Through the detailed analyses of the PL shapes, linewidths, and polarizations at different pump wavelengths, pump intensities and sample temperatures, it is evidenced that the wire width and subband energy gradually decrease while the average wire thickness increases from the bottom period to the top one, period by period. Meanwhile, the average wire width gradually decreases. In addition, from the bottom to the top period the size fluctuation within each period decreases. Furthermore, above certain temperature or pump intensity all the quantum wires are vertically coupled among one another. Following these results, new growth conditions have been suggested, which can be essential to improving the optical quality of these self-assembled quantum wires.

Paper Details

Date Published: 28 March 2002
PDF: 7 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460807
Show Author Affiliations
Xiaodong Mu, Lehigh Univ. (United States)
Yujie J. Ding, Lehigh Univ. (United States)
Ioulia B. Zotova, Univ. of Arkansas (United States)
Haeyeon Yang, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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