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Proceedings Paper

Design, growth, and characterization of GaAs/AlAs type-II superlattices
Author(s): Xiaodong Mu; Yujie J. Ding; Jacob B. Khurgin; Xiaojun Wang; Junping Zhang; Fow-Sen Choa
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Paper Abstract

We report our recent results on characterization of GaAs/AlAs superlattices exhibiting evidence of a quasi- indirect transition between minibands. These structures have potential applications in semiconductor optical amplifiers with greatly-reduced cross-talk at high bit rates and Q-switched lasers.

Paper Details

Date Published: 28 March 2002
PDF: 5 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460806
Show Author Affiliations
Xiaodong Mu, Lehigh Univ. (United States)
Yujie J. Ding, Lehigh Univ. (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)
Xiaojun Wang, Nortel Networks (United States)
Junping Zhang, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)


Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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