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Proceedings Paper

Microstructure and optical properties of Ge(Si) dots grown on Si
Author(s): Jun Wan; Song Tong; Zhimei Jiang; Gaolong Jin; Y. H. Luo; Jian-Lin Liu; Xiaozhou Liao; Jin Zou; Kang Lung Wang
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Paper Abstract

The microstructural, luminescence properties and photoresponse of multilayer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 mm and relatively high external quantum efficiency is obtained.

Paper Details

Date Published: 28 March 2002
PDF: 6 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460805
Show Author Affiliations
Jun Wan, Univ. of California/Los Angeles (United States)
Song Tong, Univ. of California/Los Angeles (United States)
Zhimei Jiang, Univ. of California/Los Angeles and Fudan Univ. (United States)
Gaolong Jin, Univ. of California/Los Angeles (United States)
Y. H. Luo, Univ. of California/Los Angeles (United States)
Jian-Lin Liu, Univ. of California/Los Angeles (United States)
Xiaozhou Liao, Univ. of Sydney (Australia)
Jin Zou, Univ. of Sydney (Australia)
Kang Lung Wang, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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