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Proceedings Paper

InAs quantum dot laser diodes: structure, characteristics, and temperature dependence
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Paper Abstract

The influence of two monolayer (ML)-thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy, photoluminescence (PL) and electroluminescence. The main purpose of this work was to achieve high internal quantum efficiency of the active medium and temperature stability of the laser diodes. Single and multiple layers of 2.0-2.4ML InAs QDs with various combinations of under- and overlayers were grown on GaAs (001) substrate by molecular beam epitaxy inside a AlAs/GaAs short-period superlattice. It was found that a 2.4-ML InAs QD layer with GaAs underlayer and 2-ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of 2.2-ML InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130 degree(s)C.

Paper Details

Date Published: 28 March 2002
PDF: 10 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460804
Show Author Affiliations
Vadim E. Tokranov, SUNY/Albany (United States)
Michael Yakimov, SUNY/Albany (United States)
Alex Katsnelson, SUNY/Albany (United States)
Katharine Dovidenko, SUNY/Albany (United States)
Rene Todt, SUNY/Albany (United States)
Serge Oktyabrsky, SUNY/Albany (United States)


Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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