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Proceedings Paper

Tunneling-injection quantum dot laser
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Paper Abstract

Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD) laser are proposed. Suppression of the parasitic recombination outside the QDs, which is the dominant source of the temperature dependence of the threshold current in the conventional design of a QD laser, is accomplished either by tunneling injection of carriers into the QDs or by bandgap engineering. Elimination of this recombination channel alone enhances the characteristic temperature T0 above 1000 K. Remaining sources of temperature dependence (recombination from higher QD levels, inhomogeneous line broadening, and violation of charge neutrality in QDs) are studied. Tunneling injection structures are shown to offer an additional advantage of suppressed effects of inhomogeneous broadening and neutrality violation.

Paper Details

Date Published: 28 March 2002
PDF: 10 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460802
Show Author Affiliations
Levon V. Asryan, SUNY/Stony Brook and A.F. Ioffe Physico-Technical Institute (Russia) (United States)
Serge Luryi, A.F. Ioffe Physico-Technical Institute (United States)


Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

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