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Proceedings Paper

Vertical-cavity surface-emitting laser diodes for telecommunication wavelengths
Author(s): Markus-Christian Amann; Markus Ortsiefer; Robert Shau; Juergen Rosskopf
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Paper Abstract

A new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions: the buried-tunnel-junction (BTJ) VCSEL is reviewed. Excellent cw laser performance has been demonstrated for BTJ-VCSELs in the 1.55μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55μm), operation voltages below 1.4V, 10-70 Ω series resistance, differential efficiencies >25%, up to more than 7mW optical output power, >100°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB. Also, recent achievements on high-speed long-wavelength VCSELs are reported.

Paper Details

Date Published: 4 December 2002
PDF: 7 pages
Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.460475
Show Author Affiliations
Markus-Christian Amann, Technische Univ. Muenchen (Germany)
Markus Ortsiefer, Technische Univ. Muenchen (Germany)
Robert Shau, Technische Univ. Muenchen (Germany)
Juergen Rosskopf, Technische Univ. Muenchen (Germany)


Published in SPIE Proceedings Vol. 4871:
Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
Richard P. Mirin; Carmen S. Menoni, Editor(s)

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