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Proceedings Paper

Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution
Author(s): Hideo Kawahara; Y. Sakai; Takuji Goda; Akihiro Hishinuma; Kazuo Takemura
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Paper Abstract

It has been reported in previous works on the LPD (liquid phase deposition) method that SiO2 film deposition could be made by utilizing the chemical transition from supersaturation to saturation in silica dissolution in H2SiF6 aqueous solution. In this study, the supersaturated state was obtained and maintained by employing the dependence of silica solubility on H2SiF6 solution temperature without a reaction initiator. As for the influence of the process parameters on SiO2 film properties, it came into notice that a dense film structure was obtained in the deposition at higher solution temperature (around 60 degree(s)C). As a result, transparent and crack-free thick SiO2 film over 10 microns was obtained by this advanced LPD method.

Paper Details

Date Published: 1 August 1991
PDF: 6 pages
Proc. SPIE 1513, Glasses for Optoelectronics II, (1 August 1991); doi: 10.1117/12.46023
Show Author Affiliations
Hideo Kawahara, Nippon Sheet Glass Co., Ltd. (Japan)
Y. Sakai, Nippon Sheet Glass Co., Ltd. (Japan)
Takuji Goda, Nippon Sheet Glass Co., Ltd. (Japan)
Akihiro Hishinuma, Nippon Sheet Glass Co., Ltd. (Japan)
Kazuo Takemura, Nippon Sheet Glass Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1513:
Glasses for Optoelectronics II
Giancarlo C. Righini, Editor(s)

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