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Proceedings Paper

Air optical breakdown on silicon as a novel method to fabricate photoluminescent Si-based nanostructures
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Paper Abstract

A novel dry, vacuum-free laser-assisted method for a fabrication of nanostructured Si/SiOx layers on a silicon wafer is demonstrated. This method uses the phenomenon of air optical breakdown to modify a semiconductor surface. Pulsed radiation from a CO2 laser was focused on a silicon wafer to initiate the optical breakdown in atmospheric pressure air. After several breakdown initiations near the threshold of plasma production, a gray-tint layer was formed under the radiation spot on the silicon surface. The size of the processed area could be controlled by varying the radiation focusing conditions. Properties of the layers were studied by optical and SEM microscopies, XPS, XRD, Specular X-ray Reflectivity and PL spectroscopy. It was found that the layers had the porosity of about 75-80% and contained nanoscale holes and channels. They consisted of silicon nanocrystals embedded in SiO2 matrix and exhibited strong photoluminescence (PL) at 1.9-2.0 eV, which could be seen by naked eyes. Possible mechanisms of nanostructure formation and PL origin are discussed. The method can be used for a controlled local patterning of photoluminescent nanostructured materials.

Paper Details

Date Published: 18 March 2002
PDF: 8 pages
Proc. SPIE 4636, Nanoscience Using Laser-Solid Interactions, (18 March 2002); doi: 10.1117/12.459737
Show Author Affiliations
Andrei V. Kabashin, Ecole Polytechnique de Montreal (Canada)
Michel Meunier, Ecole Polytechnique de Montreal (Canada)

Published in SPIE Proceedings Vol. 4636:
Nanoscience Using Laser-Solid Interactions
Kouichi Murakami; David B. Geohegan; Frank Traeger, Editor(s)

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