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Proceedings Paper

Nonlinear optic in-situ diagnostics of a crystalline film in molecular-beam-epitaxy devices
Author(s): Victor F. Krasnov; Semion L. Musher; V. I. Prots; Alexander M. Rubenchik; Vladimir E. Ryabchenko; Mikhail F. Stupak
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Paper Abstract

A new method of film structure in situ monitoring is proposed for MBE (molecular beam epitaxy) and MOCVD technologies. It is based on the analysis of second harmonic (SH) radiation induced in a growing film irradiated by a laser beam. SH intensity measurement versus angle of polarization plane of the incident light and versus film thickness provides the in situ information about film crystal quality, presence of polycrystal component, and crystallographic axes orientation. This method can be complementary to the well-known technique of fast electron diffraction (RHEED) and is supposed to be especially suitable for research groups since it allows a correlation between technological and crystallographic parameters to be quickly determined.

Paper Details

Date Published: 1 August 1991
PDF: 9 pages
Proc. SPIE 1506, Micro-Optics II, (1 August 1991); doi: 10.1117/12.45973
Show Author Affiliations
Victor F. Krasnov, Institute of Automation and Electrometry (Russia)
Semion L. Musher, Institute of Automation and Electrometry (Russia)
V. I. Prots, Institute of Automation and Electrometry (Russia)
Alexander M. Rubenchik, Institute of Automation and Electrometry (Russia)
Vladimir E. Ryabchenko, Institute of Automation and Electrometry (Russia)
Mikhail F. Stupak, Institute of Automation and Electrometry (Russia)


Published in SPIE Proceedings Vol. 1506:
Micro-Optics II
Anna Maria Verga Scheggi, Editor(s)

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