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Proceedings Paper

Crystalization kinetics in Ge2Sb2Te5 phase-change recording films
Author(s): Kenji Ozawa; Shinji Ogino; Yoshikazu Satoh; Tatuo Urushidani; Atsushi Ueda; Hiroshi Deno; Haruo Kawakami
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Paper Abstract

Crystallization kinetics of Ge2Sb2Te5 phase-change recording films were studied through the isothermal annealing test, the static laser annealing test, and the static/dynamic observation by transmission electron micrographs. It has been considered that the crystallization of recorded mark at erasing process dominated by the crystal growth, where the crystalline nuclei had already produced during recording process of the mark.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1499, Optical Data Storage '91, (1 July 1991); doi: 10.1117/12.45932
Show Author Affiliations
Kenji Ozawa, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Shinji Ogino, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Yoshikazu Satoh, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Tatuo Urushidani, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Atsushi Ueda, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Hiroshi Deno, Fuji Electric Corporate Research and Development, Ltd. (Japan)
Haruo Kawakami, Fuji Electric Corporate Research and Development, Ltd. (Japan)


Published in SPIE Proceedings Vol. 1499:
Optical Data Storage '91

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