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Proceedings Paper

Imaging quality analysis using direct Monte Carlo simulation and CAR reaction model in mask fabrication
Author(s): Takeshi Ohfuji; Naoko Kuwahara; Masa-aki Kurihara; Naoki Kitano; Shigekazu Fujimoto; Naoya Hayashi; David H. Hwang
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Paper Abstract

We have developed a novel EB lithography simulator, which can analyze imaging quality such as Line Edge Roughness (LER), pattern distortion, and corner rounding for the mask fabrication process. The simulator has a direct Monte Carlo calculation mode with unequal mesh dividing, works on cluster PCs hardware, and installs an exact Chemically Amplification Resist (CAR) reaction model. The simulation analysis line and contact hole patterns clarify that intrinsic LER induced by electron scattering is dependent on the exposure dose below 10uC/cm2 and has strong dependence on diffusion length. Moreover, the simulation identify that there is an optimum point around 10uC/cm2 of sensitivity and 30nm of diffusion length, considering corner rounding effect. The developed simulator demonstrates that direct Monte Carlo simulation can analyze the imaging quality of mask pattern quantitatively and practically, and has the potential to be a mainstream for EB lithography simulation.

Paper Details

Date Published: 11 March 2002
PDF: 10 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458366
Show Author Affiliations
Takeshi Ohfuji, Intel KK (Japan)
Naoko Kuwahara, Dai Nippon Printing Co., Ltd. (Japan)
Masa-aki Kurihara, Dai Nippon Printing Co., Ltd. (Japan)
Naoki Kitano, Intel KK (Japan)
Shigekazu Fujimoto, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
David H. Hwang, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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