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Proceedings Paper

Binary mask defect printability for 130-nm ArF lithography
Author(s): Shu-Chun Lin; Jian-Hong Chen; Tyng-Hao Hsu; C. C. Hung; Chin-Hsiang Lin
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Paper Abstract

Recent observations indicate that wafer CD control for the 0.13-micrometers node is sensitive to non-phase defects between 0.1 micrometers and 0.25 micrometers on a 4X reticle, as a function of the location of the sub-killer defect. Since more and more small defects can be detected by today's advanced mask defect inspection tools, it is important to determine whether these detected defects can impact wafer lithography process window. The experimental result is based on a typical 0.13-micrometers process using a pre-designed Defects Sensitivity Monitor reticle to address the printability of these programmed defects.

Paper Details

Date Published: 11 March 2002
PDF: 15 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458363
Show Author Affiliations
Shu-Chun Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jian-Hong Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tyng-Hao Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. C. Hung, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chin-Hsiang Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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